AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

High Luminescence Efficiency in MoS2 Grown by Chemical Vapor Deposition.

One of the major challenges facing the rapidly growing field of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is the development of growth techniques to enable large-area synthesis of high-quality materials. Chemical vapor deposition (CVD) is one of the leading techniques for the synthesis of TMDCs; however, the quality of the material produced is limited by defects formed durin...

GaN HEMT PA with over 84% power added efficiency

Described are the design procedure and measured performance of a PA targeted for the W-CDMA downlink band exhibiting over 84% PAE at 2.14 GHz. The PA is designed with an uncharacterised GaN HEMT. A measurement-based design approach is used to optimise the source and load impedance at the fundamental frequency with classF harmonic terminations enforced. S-parameters extracted from a full-wave EM...

Structural and electrical characterization of Bi₂Se₃ nanostructures grown by metal-organic chemical vapor deposition.

We characterize nanostructures of Bi(2)Se(3) that are grown via metal-organic chemical vapor deposition using the precursors diethyl selenium and trimethyl bismuth. By adjusting growth parameters, we obtain either single-crystalline ribbons up to 10 μm long or thin micrometer-sized platelets. Four-terminal resistance measurements yield a sample resistivity of 4 mΩ·cm. We observe weak antilocali...

SiC coatings grown by liquid injection chemical vapor deposition using single source metal-organic precursors

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition

Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 ar...